A team of researchers has proposed a new concept for magnet-based memory devices that might revolutionize information storage devices due to their potential for large-scale integration, non-volatility ...

AI-driven memory demand is squeezing global supply, raising device costs and threatening affordable smartphone ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

If you’ve noticed that your next smartphone, laptop, or PC upgrade suddenly costs noticeably more than it did a year ago, you’re seeing the effects of the 2026 memory supply shortage play out in real ...

A research team led by Professor Taesung Kim from the School of Mechanical Engineering at Sungkyunkwan University has developed hafnium oxide-based ferroelectric transistor arrays and successfully ...

Researchers have explored a 'quantum-inspired' technique to make the 'ones' and 'zeroes' for classical computer memory applications out of crystal defects, each the size of an individual atom. This ...

A quantum version of a random access memory can read and write information 1000 times, and could eventually become a key component in long-distance quantum networks. In conventional computers, random ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

Researchers at the University of Tokyo say they have demonstrated a non-volatile magnetic switching device capable of flipping states in just 40 picoseconds while consuming unusually little power and ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...